http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001085425-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-1209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B19-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 |
| filingDate | 2000-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_546ed722a40bc193af2f103ca65a97dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f8a318b3006707b6908ae344d906b4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ff73f06ab1a311e4051d0181627ce45 |
| publicationDate | 2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001085425-A |
| titleOfInvention | Manufacturing method of dielectric film |
| abstract | PROBLEM TO BE SOLVED: To enable formation of a ferroelectric film at a substrate temperature of 400 ° C. or less, to enable use of an electrostatic chuck, and to remove unnecessary films formed on the back surface of the substrate. Reduce the number of processes. SOLUTION: A first group consisting of an organic Bi compound, a second group consisting of an organic Sr compound, a third group consisting of an organic Ti compound, and a fourth group consisting of an organic Ta compound and an organic Nb compound. At least one organometallic compound is selected from each group of the group and mixed to a predetermined composition to generate a reaction gas. An oxide film is formed on the substrate 10 by introducing the mixed gas into a reaction chamber (not shown) in which the substrate 10 maintained at a temperature of 00 ° C. or less is installed and performing chemical vapor deposition using plasma energy. Then, the oxide film is heat-treated in an oxidizing atmosphere to obtain Sr x Bi y (Ta, N b) forming a 2.0 Ti z O w film 16. |
| priorityDate | 1999-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.