| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b27deaf45890893586c2ed77ac13dc32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f76c4fae705bcde9ca944622adc6619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71cad1238846b35734c5c09c4e083d3 |
| publicationDate |
2001-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001077336-A |
| titleOfInvention |
Element for substrate evaluation and method of manufacturing the same |
| abstract |
(57) [Problem] To provide a substrate evaluation element capable of correctly evaluating an SOI substrate. A silicon layer is formed on a buried oxide film. In the substrate evaluation element for evaluating the SOI substrate 20 on which the MOS capacitor 30 is formed, the MOS capacitor 30 is formed on the silicon layer 23 and the diffusion of the type opposite to the type of the silicon layer 23 is formed in the silicon layer 23 around the MOS capacitor 30. The layer 23a is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006156730-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003068869-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014038976-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005057153-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4525024-B2 |
| priorityDate |
1999-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |