| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64ce9e67b090644ea50f977c57776a34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate |
1999-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9781550fa9363d563c3b138e0f76302a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a502aadc0cb984c9018ac0fb16897108 |
| publicationDate |
2001-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001077061-A |
| titleOfInvention |
Abrasive for semiconductor |
| abstract |
An object of the present invention is to provide an excellent abrasive which can flatten a metal layer and / or a barrier layer in a semiconductor device manufacturing process. SOLUTION: The weight average particle diameter is 0.1 to 0.3 μm. m, cerium oxide particles having an average crystallite diameter of 150 to 600 ° are used as abrasive grains. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008042216-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008088053-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02067309-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009227893-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6786945-B2 |
| priorityDate |
1999-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |