| abstract |
(57) [Problem] An electron beam drawing mask and the like, in which transmission and scattering of electrons are controlled, beam contrast is good, exposure electron loss is small, influence of chromatic aberration can be reduced, and exposure time can be shortened. SOLUTION: A pattern supporting film 6 that transmits an electron beam; An electron beam writing mask comprising: an electron beam scatterer pattern 5 formed on the pattern support film; and a support 3 that supports the pattern support film 6 and the electron beam scatterer pattern 5; For No. 6, the film thickness is 0.005 μm to 0.2 μm, the film material density is 1.0 to 5.0 g / cm 3 , and the elastic modulus is 0.8 × 1 0 11 Pa or more, and for the electron beam scatterer pattern 5, the film thickness is 0.2 to 2 μm, the film material density is 1.0 to 5.0 g / cm 3 , and the elastic modulus is 0.8 X10 11 Pa or more, a mask for electron beam drawing. |