http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001075263-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F17-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-36 |
| filingDate | 1999-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d9b884e8e6f3f936acd6e2a5cf9f647 |
| publicationDate | 2001-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001075263-A |
| titleOfInvention | Photomask and method for creating photomask pattern data |
| abstract | (57) [Problem] To provide a photomask capable of preventing formation of a residual resist due to poor bleeding and slits and forming a desired resist pattern. SOLUTION: This photomask 1 has a light shielding slit 12 as a light shielding region and a memory cell light shielding region 13. Since the protruding portion 12a, which is the end of the light-shielding slit 12, protrudes at the corner of the memory cell light-shielding region 13, light diffraction at this portion can be suppressed, and the remaining resist can completely cover the non-exposed cells. Also, 2 Since the three different protrusions 12a do not cross each other, it is possible to prevent the generation of the residual resist due to the crossing of the protrusions 12a. Therefore, disturbance of the resist pattern can be avoided. |
| priorityDate | 1999-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.