| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B27-0023 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2000-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c671e5e3e060993b0711f6ee5403b29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bfdce8ecaad9d5c9457ee9bb9a22f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1a9dc4e459bbd8b96ff73dfe1196e1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbed42c249a7603ed024e4711f5aad1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5dad020fcfd6c1b393fcab133e5b05f9 |
| publicationDate |
2001-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001068441-A |
| titleOfInvention |
Selective damascene chemical mechanical polishing |
| abstract |
(57) [Problem] To provide a damascene CMP technique for removing dishing and large-scale topography from a surface to be polished. A semiconductor device includes a semiconductor layer formed on a substrate, an insulating layer formed on the semiconductor layer and patterned to expose a part of the semiconductor layer, and an exposed portion of the insulating layer and the semiconductor layer. A barrier layer formed thereon, A conductive layer formed on the barrier layer. The semiconductor device is pressed against the first rotating polishing pad without the embedded abrasive particles, and a portion of the conductive layer overlying both the barrier layer and the insulating layer is removed. The semiconductor device is pressed against a second rotating polishing pad having embedded abrasive particles, exposing a portion of the barrier layer located on the insulating layer. The device is pressed against a third rotating polishing pad that does not have embedded abrasive particles, and that portion of the barrier layer located above the insulating layer is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012109019-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100979737-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012033265-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011175726-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012028005-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014179632-A |
| priorityDate |
1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |