http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001060675-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3022313743f958cb0b7b8d37b1a15f14 |
| publicationDate | 2001-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001060675-A |
| titleOfInvention | Nonvolatile electrically rewritable semiconductor memory device |
| abstract | [PROBLEMS] To provide a nonvolatile electrically rewritable semiconductor memory element such as a MONOS type or MNOS type, which has the same function as a booster gate and increases the number of manufacturing steps. Provide no semiconductor memory device. The memory element includes (a) a source / drain region formed in a semiconductor substrate, and a channel formation region sandwiched between the source / drain regions. (B) The channel formation region 2 is provided above the channel formation region 24 and is composed of the laminated films 20A, 20B, and 20C. A charge storage unit 20 that has a charge trap that is discretized in a plane facing 4 and stores information by injecting or extracting charge, and (c) formed on the charge storage unit 20 Gate electrode 21, and (D) Boost electrode 30 formed on semiconductor substrate 10 for boosting the gate electrode during programming of the memory element It has. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7018890-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008258642-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100446308-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002324860-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4610840-B2 |
| priorityDate | 1999-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.