http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001052994-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
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filingDate 1999-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb161e61ce3d2e6ab58d26a81ef56f09
publicationDate 2001-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001052994-A
titleOfInvention Method for manufacturing semiconductor device
abstract (57) [Abstract] (with correction) [PROBLEMS] To provide a method of manufacturing a semiconductor device which can reduce the adhesion between polyimide and a resist and prevent intermixing. SOLUTION: A polyimide 2 is coated on a silicon wafer 1 and cured, and isopropyl alcohol and water are mixed at a ratio of 1: 1. An aqueous solution in which 1% of γ-methacryloxypropyltrimethoxysilane is dissolved is dissolved in this solution. It was prepared as a coupling agent 3, and this aqueous solution was mixed with polyimide 2 Is immersed for 10 minutes, then the silicon wafer is taken out, washed with isopropyl alcohol, and air-dried, and then the resist 4 is coated on the silicon wafer 1 coated with the silane coupling agent 3. And patterning. By applying the silane coupling agent 3, the adhesion between the resist 4 and the polyimide 2 is reduced, and the resist residue is prevented.
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