http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001051421-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 |
| filingDate | 1999-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf92c6162f276a54a5782dd87f205c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcbffcb64a5670ed86f001e8cc9bc95e |
| publicationDate | 2001-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001051421-A |
| titleOfInvention | Pattern formation method |
| abstract | (57) Abstract: Provided is a pattern forming method in which a resist pattern formed by using an ArF excimer laser beam has good dependency on density and is suitable for a short wavelength light source. SOLUTION: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (B) a compound of the general formula (I) or (I) A resin having at least one of the monovalent polycyclic alicyclic groups represented by I) or (III) and a group which is decomposed by the action of an acid to increase solubility in an alkaline developer. Applying a positive photoresist composition for deep ultraviolet exposure on a substrate, exposing the resulting photoresist composition film in a pattern by actinic rays or radiation, and the exposed photoresist composition Developing a film with an organic alkali aqueous solution in the presence of a surfactant. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1916568-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1916568-A2 |
| priorityDate | 1999-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 392.