| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C251-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C251-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F4-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F4-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-32 |
| filingDate |
2000-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_871979c9e5b371bb077f7c5cb71ffacb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee40ce68d3315e15ea938c010246647b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05f4e0d8ac0746b16fa2202074eeff84 |
| publicationDate |
2001-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001049231-A |
| titleOfInvention |
Organic antireflection polymer and method for producing the same |
| abstract |
(57) Abstract: In a process of forming an ultrafine pattern using a photoresist for lithography in a manufacturing process of a semiconductor device, reflection of a lower film layer is prevented to reduce the thickness of ArF light and the thickness of the photoresist itself. Elimination of standing waves caused by changes. Another object of the present invention is to provide an antireflection composition containing such an organic antireflection polymer, an antireflection film using the same, and a method for producing the same. SOLUTION: A polymer having a basic structure represented by Chemical Formula 1 and Chemical Formula 2 is used as an antireflection film at the time of forming an ultrafine pattern during a semiconductor manufacturing process. Embedded image Embedded image |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7794919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4532726-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004090640-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004090640-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001235858-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8460855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014152192-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101216402-B1 |
| priorityDate |
1999-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |