http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001044572-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate | 1999-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c3f2fe655b59514d7650c1728580e16 |
| publicationDate | 2001-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001044572-A |
| titleOfInvention | Semiconductor laser using III-V semiconductor containing nitrogen |
| abstract | (57) [Summary] [Problem] To reduce the amount of Ga by using a III-VN compound semiconductor material. A semiconductor laser that is relatively easy to grow on As, has excellent threshold temperature characteristics, and whose oscillation wavelength does not easily change with temperature fluctuation. A semiconductor laser having at least an active layer and a cladding layer for confining light on a GaAs substrate. Mixed crystals comprising at least a portion of nitrogen in the active layer 103 semiconductor Ga x In 1-x N y As The cladding layers 102 and 104 are also made of a III-V semiconductor containing nitrogen. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005276928-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003017812-A |
| priorityDate | 1999-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.