http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001036096-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2000-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed |
| publicationDate | 2001-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001036096-A |
| titleOfInvention | Semiconductor integrated circuit |
| abstract | (57) Abstract: In a thin film transistor, disconnection of a second layer wiring is prevented. In a semiconductor integrated circuit having a thin film transistor, the thin film transistor has a first region and a second region. An insulating surface having a region, a semiconductor film formed on a first region on the insulating surface, and a second film on the insulating surface. An insulating film formed on the region, a gate electrode formed above the first region, an insulator formed on a side surface of the gate electrode, the insulating film, the insulator, and the gate electrode. And a wiring crossing the insulator and the gate electrode, wherein the wiring is connected to a source region and a drain region of the semiconductor film. It is an integrated circuit. |
| priorityDate | 1994-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.