http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001035779-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
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filingDate 1999-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3992939cf3b0a41986e22bcf70ecf91
publicationDate 2001-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001035779-A
titleOfInvention Method of forming fine pattern
abstract (57) [Summary] [PROBLEMS] It is not necessary to directly immerse a resist after baking in a developing solution, and it is possible to detect a size shift due to a defocus of an exposure apparatus, and to uniformity of a size in a chip. And a method for forming a fine pattern which can easily secure the fine pattern. SOLUTION: The method for forming a fine pattern according to the present invention comprises, as a main component, a polymer compound or a monomolecular compound in which at least a part of a phenolic hydroxyl group is substituted by a protecting group which is easily removed by the action of an acid. A step of applying a chemically amplified resist made of a radiation-sensitive material on a semiconductor substrate and baking it; a step of exposing the chemically amplified resist to a basic atmosphere; and exposing the chemically amplified resist at a wavelength of far ultraviolet rays or less. And a step of developing with an aqueous alkali solution after heating if necessary.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005088398-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-1295750-C
priorityDate 1999-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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