| abstract |
(57) Abstract: In processing a substrate that has been subjected to dry etching and ashing using a photoresist pattern provided on the substrate as a mask, the residue after the ashing is treated with a stripping liquid. A rinsing liquid used for cleaning (rinsing) and a method for treating a substrate using the rinsing liquid are provided. SOLUTION: A rinsing liquid for use in a rinsing process after etching the substrate using a photoresist pattern provided on the substrate as a mask, ashing, and subsequently treating a residue after the ashing with a stripping solution, A rinsing solution for photolithography, wherein the rinsing solution has a pH of 8 to 12, and a method for treating a substrate using the same. |