http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001033644-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B6-13 |
| filingDate | 1999-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8af36910c86323969259e262c29c419 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbda31dbc25e14ec90605e336bc72151 |
| publicationDate | 2001-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001033644-A |
| titleOfInvention | Manufacturing method of optical waveguide film |
| abstract | [PROBLEMS] To provide an optical waveguide having a thickness of 10 on a silicon substrate. Provided is a method for manufacturing an optical waveguide film in which contamination such as impurities or particles is prevented when an oxide film having a thickness of μm or more is formed. SOLUTION: When an oxide film having a thickness of 10 μm or more is formed on the surface of a silicon substrate by a thermal oxidation method, when the oxide film is grown to a thickness of 5 μm or more, the oxidation step is temporarily interrupted to grow the surface. The formed oxide film is removed by etching with a hydrofluoric acid aqueous solution until the thickness becomes 0.5 μm or less, and an oxide film is grown thereon to form an oxide film having a desired thickness. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1234895-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1234895-A3 |
| priorityDate | 1999-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.