http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001024283-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1999-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b56f097b2e44b3c73a5e1655939d40e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28ca9aa88f8c7200de2be2f2d7c59af2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a58492178f6d3bd2cdc86119a1d99498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d1da17ee6981e80a9b1aff3c41d58eb |
| publicationDate | 2001-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001024283-A |
| titleOfInvention | Semiconductor laser manufacturing method and semiconductor laser |
| abstract | (57) [Problem] To provide a strained quantum well semiconductor laser having improved reliability by increasing a critical film thickness. SOLUTION: In the step of crystal-growing a double hetero structure including a strained quantum well active layer 3 in which a well layer and a barrier layer are stacked on a GaAs substrate, the growth temperature of the well layer is set to a value of the crystal growth layer other than the well layer. It is characterized by being lower than the growth temperature. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009059843-A |
| priorityDate | 1999-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.