| abstract |
PROBLEM TO BE SOLVED: To provide a resist resin and a chemically amplified resist composition suitable for DUV excimer laser lithography or electron beam lithography having high dry etching resistance. SOLUTION: The resist resin is soluble in an alkaline aqueous solution by an acid, and has a formula (1), (2) or (3). A resist resin comprising a monomer unit having at least one structure selected from the group consisting of: Embedded image (R is a hydrogen atom or an alkyl group, n is an integer of 0 to 10) (R is a hydrogen atom or an alkyl group, n is an integer of 0 to 10) (R is a hydrogen atom or an alkyl group, m is an integer of 0 to 3, n is an integer of 0 to 10) |