http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001019598-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a07d0b3e3169dd026ecd9113fc9cc4ad |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 1999-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bec1fd8e65ada94c6b86e4c59696cc9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b99e96b66a8a5deb2de5adde4abcf88 |
| publicationDate | 2001-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001019598-A |
| titleOfInvention | Method for vapor phase growth of III-V compound semiconductor |
| abstract | (57) Abstract: Even in a crystal layer having a short growth time such as a spacer layer, the thickness of the thin film can be uniformly grown. An object of the present invention is to provide a method for vapor-phase growth of a III-V compound semiconductor. A substrate for growing a semiconductor crystal is held on a susceptor, and the susceptor is heated and rotated to supply a source gas and a diluting gas onto the substrate. In the vapor phase growth method for growing a group IV-V compound semiconductor crystal, one crystal layer is grown twice, and the growth start time is shifted by an odd number of times that the susceptor 5 rotates half a turn. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190083616-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019121674-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102323787-B1 |
| priorityDate | 1999-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.