| abstract |
(57) [Problem] It has been difficult to easily achieve miniaturization and high efficiency of a gallium nitride based semiconductor light emitting device with an element for preventing electrostatic breakdown. SOLUTION: A flat element mounting surface 27 is provided on a lead member 22. To form The constant voltage diode element 21 for preventing electrostatic breakdown is fixed on the element mounting surface 27. Light reflector 24 having through hole 59 on the upper surface of constant voltage diode element 21 Place. The light emitting diode chip 20 is disposed in the through hole 59 of the light reflecting plate 24, Is connected to the electrodes 33 and 34 of the constant voltage diode element 21. |