http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001011627-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 1999-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d3c2f0020112a2ef8039934122a6af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe8f402c6bd5ce2694423041a7de375a |
| publicationDate | 2001-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001011627-A |
| titleOfInvention | Method of forming tungsten film, semiconductor device and film forming apparatus |
| abstract | (57) [Problem] To provide a CVD film forming method for forming a high quality W nucleation film on a WxN film and eventually forming a high quality W film. In a film forming method according to the present invention, a B 2 H 6 gas is sprayed from a supply source for a predetermined time to a surface of a WxN film on a substrate to be processed, and then a W nucleation film is formed by a CVD method. . Then, a W film is formed by a CVD method using the W nucleation film as a nucleus. As described above, when only the B 2 H 6 gas is supplied before the formation of the W nucleation film, a high-quality W nucleation film is formed on the WxN film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010526441-A |
| priorityDate | 1999-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.