http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001011602-A

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filingDate 1999-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_200ce5d3145f1cc6dcf81c71af277fe1
publicationDate 2001-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2001011602-A
titleOfInvention Fluoride thin film, method for producing the same, optical thin film and optical element
abstract (57) [Summary] [PROBLEMS] Conventionally, an ultraviolet region, particularly an ArF wavelength (193n) has been used. In order to improve the optical performance of the optical thin film of m), since the film material used is limited, the difference in the refractive index between the high refractive index material and the low refractive index material cannot be increased. The optical thin films used at the ArF wavelength (193 nm) had lower optical performance than those used in the visible range. SOLUTION: After forming a mixed thin film composed of silicon dioxide and fluoride on a fluoride substrate by co-evaporation, by selectively removing only silicon dioxide from the mixed thin film, a low refractive index fluoride thin film is formed. Produced.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020019979-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015194789-A
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