| abstract |
PROBLEM TO BE SOLVED: To prevent an interlayer film from being damaged by stress due to alloying of Al and Au when bonding an Au wire to a bonding pad formed on a transistor cell. . SOLUTION: An n − -type epitaxial layer 2 is formed on an n + -type silicon substrate 1, and a p-type source layer 6 is provided thereon. A gate oxide film 4 and a gate electrode 5 are formed in the trench 3, and an n + -type source region 7 is provided on the outer periphery of the gate electrode. After the gate electrode 5 is covered with the interlayer film 8, the TiN / T i layer 9 and AlSiCu layer 10 which is a Cu-containing Al alloy layer Is formed. Since the bonding pad is formed of Al containing Cu, the alloying of Al during bonding is suppressed, and the interlayer film 8 is prevented from being damaged. |