http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000354925-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e16720e68a1dae2997fc995b7a2729ff |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23Q3-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22 |
| filingDate | 1999-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3ff5f7fb14c51bd0a6ffb7abb2d93d6 |
| publicationDate | 2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000354925-A |
| titleOfInvention | Piezoelectric element and processing method thereof |
| abstract | PROBLEM TO BE SOLVED: To process a piezoelectric element, an electronic material such as silicon or gallium arsenide, and other substances, which have been considered difficult in the past, which is thinner than a manufacturing limit. A working tool and a working method thereof. SOLUTION: A quartz plate or a quartz plate obtained by polishing an electronic material such as silicon or gallium arsenide using a double-side polishing machine, a single-side polishing machine, or another polishing machine. The thickness is 80 μm and the diameter of the quartz plate is 2 inches). Perform chemical etching such as RIE, After removing several tens of μm (for example, 62 μm), several μm (for example, 62 μm by RIE processing) generated by chemical etching processing such as RIE processing. When removing m, irregularities of about 0.2 to 3 μm are generated), and again, a quartz plate that is polished by a double-side polishing machine, a single-side polishing machine, or a float polishing machine, or other polishing means Piezoelectric material, Alternatively, a method for processing a piezoelectric element, comprising processing an electronic material such as silicon or gallium arsenide. |
| priorityDate | 1999-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.