| abstract |
[PROBLEMS] To provide a semiconductor device in which a gate insulating film having a high relative dielectric constant is formed thinly and uniformly, and a method of manufacturing the same. Further, the present invention provides a semiconductor device having gate insulating films having different structures and a method for manufacturing the same. A method for manufacturing a semiconductor device having a first gate insulating film including a silicon nitride film, the method including forming a silicon oxide film on a silicon substrate, and including a molecule containing silicon and a halogen. Heat-treating the silicon oxide film 22 in an atmosphere containing NH 3 , heat-treating the silicon oxide film 22 in an atmosphere containing NH 3 , and using the silicon-containing gas and NH 3 as raw materials. Forming a silicon nitride film 24 thereon. |