| abstract |
PROBLEM TO BE SOLVED: To be able to join at a low temperature, to reduce cost, to prevent breakage and deformation of a ceramic substrate, to have a high joining strength and to have a remarkably small variation, and to have a high durability reliability in a thermal cycle. Provided is a joined body of a ceramic substrate and a semiconductor element. A metal intervening layer is provided on a ceramic substrate, A conductor layer is joined on the metal intervening layer with a brazing material having a melting point of 200 to 660 ° C, and a semiconductor element is joined on the conductor layer with a brazing material having a melting point of less than 200 ° C. Conductor layer is Cu Alternatively, it is preferable that the metal intervening layer is made of a Cu alloy or Al or an Al alloy, and contains at least one metal selected from W, Mo, Ni, Au, Cu, Ag, and Ti. |