| abstract |
(57) [Summary] (with correction) [PROBLEMS] TFT LCD structure and polycrystalline silicon T A copper conductor is used on the FT. SOLUTION: An active region including a source, a drain and a channel region of a TFT, a gate electrode on each active region adjacent to the channel region, a source and a drain electrode on each source and drain region of each active region, and a substrate A plurality of conductive lines formed on the substrate to provide operative interconnection to the selected TFT above, wherein the plurality of first conductive lines are operatively connected to the gate electrode; A plurality of second conductive lines operatively connected to a second electrode of each selected TFT, wherein the second electrode includes a plurality of conductive lines that are source or drain electrodes; The first and second conductive lines and the respective gates and second electrodes to which the lines are operatively connected on each TFT are TiN / Cu / TiN And the first / second / third layers. |