| abstract |
PROBLEM TO BE SOLVED: To form an anti-reflection film capable of forming an anti-reflection film using only a hydrocarbon-based gas, thereby improving an etching selectivity, easily removing, and inexpensively forming a thin film. And an application method. SOLUTION: A step of forming a high-reflection film on a semiconductor substrate on which an underlayer is formed, a step of forming an anti-reflection film using only a hydrocarbon-based gas on the high-reflection film, Forming a photoresist pattern on the substrate, etching a lower anti-reflection film and a high reflection film using the photoresist pattern, and simultaneously removing the photoresist pattern and the anti-reflection film from the resultant. And a process. |