| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-20 |
| filingDate |
1999-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6d849e92411168755b25ebad1b38274 |
| publicationDate |
2000-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000331940-A |
| titleOfInvention |
Sapphire substrate, method of growing nitride III-V compound semiconductor layer, and method of manufacturing semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a sapphire substrate, a method for growing a nitride III-V compound semiconductor layer and a sapphire substrate capable of preventing a surface of a growth layer near an edge from being higher than a surface of a center growth layer. Provided is a method for manufacturing a semiconductor device. SOLUTION: An edge 1a of a crystal growth surface of a sapphire substrate 1 is chamfered. A GaN-based semiconductor laser is provided on a sapphire substrate 1 with a chamfered edge 1a. It is manufactured by growing a GaN-based semiconductor layer forming a laser structure by MOCVD. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010195598-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015018960-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7919815-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7045223-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107230662-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11626301-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005062392-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101857970-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011082307-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010192516-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107230662-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10246796-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100890085-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015182280-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107190324-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017178768-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017152598-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006059851-A |
| priorityDate |
1999-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |