http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000327497-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-48 |
filingDate | 1999-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f38e7917ff82e8104ccb6a66e565c933 |
publicationDate | 2000-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2000327497-A |
titleOfInvention | Method of growing II-VI compound semiconductor crystal |
abstract | PROBLEM TO BE SOLVED: To provide a method for stably growing a group II-VI compound semiconductor crystal having excellent crystallinity on a seed crystal by a sublimation method or a halogen chemical transport method. SOLUTION: A raw material polycrystal and a seed crystal held on a seed crystal support member are opposed to each other in a growth chamber, and a II-VI group compound semiconductor crystal is formed on the seed crystal by a sublimation method or a halogen chemical transport method. In the growing method, the seed crystal supporting member is made of a material that is stable at a crystal growth temperature and is transparent to visible light and / or infrared light, and has at least a surface of the seed crystal supporting member that is in contact with the seed crystal. Forming a buffer film made of a material that is stable at a crystal growth temperature and transmits visible light and / or infrared light, and performs crystal growth while holding a seed crystal on the seed crystal support member via the buffer film. A method for growing a II-VI group compound semiconductor crystal, comprising: |
priorityDate | 1999-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.