http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000323350-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67cf58182dbd01614c2a59d70a90f968 |
| publicationDate | 2000-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000323350-A |
| titleOfInvention | Dielectric thin film capacitors |
| abstract | (57) Abstract: A thin film capacitor using a composite perovskite oxide having a large relative dielectric constant as a dielectric is provided, which prevents a dielectric thin film from cracking and provides a high withstand voltage thin film capacitor. A substrate having a coefficient of linear expansion of 7 to 13 × 10 −6 / ° k is used. As such a substrate, germanium, aluminum oxide, strontium titanate, or magnesium oxide can be used. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108963011-A |
| priorityDate | 1999-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.