| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_86dd55fff014974e0b5de7535418767a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3ab138d7c94c1686f0b9ac9d8e3b0756 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-30469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-844 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-162 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26 |
| filingDate |
2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f04c47d268e56236e79d87d7974620d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4b1b8f0160aa9f918872083ad81b6b8 |
| publicationDate |
2000-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000319783-A |
| titleOfInvention |
Method for producing carbon nanotube |
| abstract |
PROBLEM TO BE SOLVED: To provide a method for producing carbon nanotubes by which high-density plasma can be easily grown on carbon nanotubes in which graphite and carbon lumps are highly purified using high-density plasma. SOLUTION: Carbon nanotubes are grown on a substrate 11 using a high-density plasma chemical vapor deposition method of 10 11 cm -3 or more, and a carbon nanotube film having a predetermined thickness is formed on the substrate 11 using a deposition plasma. The step of growing the carbon nanotube film and the step of purifying the carbon nanotube film using etching plasma are repeatedly performed. In the step of using etching plasma, a gas containing a halogen element as a source gas, specifically, CF 4 is used. Use gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103436854-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003063814-A |
| priorityDate |
1999-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |