http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000307073-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
filingDate | 1999-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4f13c30aed69d4bda710268cdc18b2f |
publicationDate | 2000-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2000307073-A |
titleOfInvention | Storage capacitance section of semiconductor device and method of forming the same |
abstract | [PROBLEMS] To easily increase a facing area between a lower electrode and a counter electrode, sufficiently increase the amount of charge that can be stored, and realize a semiconductor device which is highly integrated. Provided is a structure of a storage capacitor portion capable of improving reliability. SOLUTION: A lower electrode 16 has an outer cylindrical structure portion made of a first conductive film 10 having a bottom surface portion located on a CVD nitride film 7 and a cylindrical wall surface portion extending upward from the outer periphery thereof. A second conductive member which is located above the bottom surface of the outer tubular structure and inside the cylindrical wall surface and has a bottom surface and an outer peripheral side surface facing the upper surface of the bottom surface of the outer cylindrical structure and the inner surface of the cylindrical wall surface, respectively; It has an inner pillar structure made of the film 13. The bottom surface of the inner column structure and the bottom surface of the outer tubular structure are partially connected. A part of the counter electrode 15 is interposed between the bottom surface and the outer peripheral side surface of the inner column structure portion and the bottom surface portion and the cylindrical wall surface portion of the outer cylindrical structure portion via the capacitive insulating film 14. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100646930-B1 |
priorityDate | 1999-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 20.