| abstract |
(57) [Abstract] (With correction) [PROBLEMS] There is a limit to miniaturization in conventional lithography using a polymer-based resist material. In order to advance the miniaturization, one method is to reduce the molecular size of the resist material, and the limit is a low-molecular resist. However, low molecular weight organic compounds generally have high crystallinity and are difficult to form an amorphous thin film, and thus are difficult to apply as a resist material. In addition, although there is no example of a low-molecular resist material, its sensitivity is low and practical use is difficult. A resist material according to the present invention comprises a low molecular compound represented by the following structural formula and having a functional group that causes a chain reaction to cause a cleavage reaction in the presence of an acid, an acid generator, and dissolving them. It is a chemically amplified low molecular weight resist containing a solvent. |