| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00e53e586a2b48654ccc45869c0aa6c8 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
1999-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_559ee535a75ddcf83bdd05cfc01ec6c0 |
| publicationDate |
2000-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2000294793-A |
| titleOfInvention |
Manufacturing method of thin film transistor |
| abstract |
(57) [Summary of Invention] A method for producing a thin film transistor. A crystalline silicon film has large irregularities on its surface, which leads to non-uniformity of TFT characteristics. Another problem is the non-uniformity of the doping concentration. A static magnetic field is applied during melting and crystallization. The doping is performed by transmutation by neutron irradiation. Further, a silicon oxide phase is provided below the polycrystalline silicon film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7040804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7629235-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7160762-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7585714-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7067403-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7842589-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I612142-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010135546-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009246399-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007502025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004153232-A |
| priorityDate |
1999-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |