| abstract |
(57) [Problem] In a hydrogenation method using plasma, as a result of directly exposing a crystalline semiconductor film to plasma, ions generated simultaneously in the plasma damage the crystalline semiconductor film. There was a problem. When the substrate is heated to 400 ° C. or higher to recover this damage, hydrogen has been disadvantageously released from the crystalline semiconductor film. SOLUTION: On a semiconductor layer formed in a predetermined shape, A step of forming a first insulating film containing hydrogen, a step of performing heat treatment in an atmosphere containing hydrogen or hydrogen generated by being converted to plasma, and a step of forming a first insulating film containing hydrogen in close contact with the first insulating film. A step of forming a second insulating film, and a step of performing a heat treatment in an atmosphere containing hydrogen or hydrogen generated by being converted into plasma, and further including hydrogen on the second insulating film. After forming the third insulating film, a step of performing heat treatment in an atmosphere containing hydrogen or nitrogen is performed. |