patent/JP-2000286421-A

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate	1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8580645965741f547fd88dc46b656b69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce53297bc4ed71328b0590ddcbf7fbb9
publicationDate	2000-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	JP-2000286421-A
titleOfInvention	Method of making thin film transistor
abstract	(57) [Summary] When manufacturing a thin film transistor having a MOS structure, there is a problem that element performance is not sufficiently exhibited due to contamination of a MOS interface during a process. SOLUTION: A clean MOS interface is formed by continuously performing a process in the same apparatus as oxidizing by plasma energy, and the device characteristics of the thin film transistor are fully exhibited.
priorityDate	1999-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544408 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520721 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID74123 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261

Total number of triples: 19.