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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
filingDate 1999-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b279f691bdcd5abc8424e07e939d67d
publicationDate 2000-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000269607-A
titleOfInvention Semiconductor laser and manufacturing method thereof
abstract (57) [Summary] [PROBLEMS] To realize a lower threshold value without lowering the luminous efficiency of a semiconductor laser and further improve the temperature characteristics. SOLUTION: Ga 0.5 In 0.5 P is formed at the center of an active layer 5. A multiple quantum well layer 52 in which quantum well layers and (Al 0.6 Ga 0.5 ) 0.5 In 0.5 P barrier layers are alternately stacked is arranged. On top of this multiple quantum well layer 52, a thickness of 30 nm The p-side light guide layer 53 is disposed. The p-side light guide layer 53 has a thickness d of a first light guide layer (intrinsic light guide layer) 53i to which an impurity is not intentionally added and a second light guide layer 53p to which a p-type impurity (Zn) is added. Light guide layer (p (Light guide layer) 53p. further, Below the multiple quantum well layer 52, a third light guide layer (n-side light guide layer) 51 having a thickness of 30 nm to which no impurity is intentionally added is disposed. The thickness d is selected to be 1 to 40 molecular layers.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007165535-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006269568-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007335804-A
priorityDate 1999-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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