abstract |
[PROBLEMS] To provide a method capable of selectively forming a metal (or metal compound) film without patterning by etching, and a method of forming a wiring using the method are desired. SOLUTION: A mask 3 having an opening 2 for exposing the surface of the base layer 1 is formed on the base layer 1, and the mask 3 is selected on the surface of the base layer 1 exposed in the opening 2 of the mask 3 by a catalytic CVD method. Metal or metal compound is deposited on the metal film 4 Forming a metal film. Also, a method for forming a wiring using the method for forming a metal film. |