| abstract |
PROBLEM TO BE SOLVED: To provide a silicon oxide film forming apparatus or a tantalum oxide film forming apparatus reactor using tetraethoxysilane or pentaethoxytantalum as a raw material, a jig for the apparatus, Provided is a cleaning gas for removing the polymer without damaging parts, piping and the like. A cleaning gas containing an HF gas and at least one gas of an oxygen-containing gas, fluorine, fluorine chloride, fluorine bromide, or fluorine iodide. |