http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000258365-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b27deaf45890893586c2ed77ac13dc32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N23-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_174318af96784a2c726aa574cd9784e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaeb12518dced02c4a151a26acc41727 |
| publicationDate | 2000-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000258365-A |
| titleOfInvention | Evaluation method of silicon single crystal |
| abstract | (57) [Abstract] (With correction) [Problem] A method using an X-ray topography method without destroying a CZ-Si wafer, which enables high-accuracy calculation of the amount of precipitated oxygen and a survey by a TEM method. The present invention provides a method capable of evaluating whether or not secondary defects such as dislocations are generated from oxygen precipitates in a sufficiently short time as compared with the method described above. SOLUTION: The correlation between the diffraction X-ray intensity and the oxygen precipitation amount is determined for each of a silicon wafer subjected to a heat treatment of 750 ° C. or more and a silicon wafer subjected to a heat treatment of 750 ° C. or less, and a heat treatment for measurement is performed. The same method is applied to the silicon single crystal that has been subjected to the measurement, the diffraction X-ray intensity is measured, and the above two types of correlations are individually applied when obtaining the oxygen precipitation amount of the same wafer, whereby the calculation accuracy of the oxygen precipitation amount is obtained. To high accuracy. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003007710-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010087140-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015188003-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03025980-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03025980-A3 |
| priorityDate | 1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.