| abstract |
PROBLEM TO BE SOLVED: To provide a device substrate, a semiconductor device, and a method for forming the device substrate, which realize high integration and low power consumption of elements. A control oxide film and a gate electrode are provided on a silicon (001) substrate. The silicon (001) substrate 100 is provided with a V-shaped groove (V groove 103), and a gold dot body 107 is embedded in the control oxide film 108 inside the V groove 103. Silicon (001) substrate 100 and gold dot body 10 7, a tunnel oxide film 104 is provided. Due to the repulsion between the gold dots 107, the gold dots 107 are arranged at equal intervals inside the V-shaped groove 103. Therefore, the number and positions of the gold dots 107 can be easily controlled, so that the number of carriers can be accurately determined. Also, it is possible to suppress variations in characteristics due to variations in the distance between the gold dots 107. |