| abstract |
(57) [Problem] A ferroelectric memory composed of a PZT thin film with a high orientation on a (111) plane can be formed by low-temperature firing, thereby avoiding damage to transistors and the like formed on another same substrate. To provide a method for manufacturing a ferroelectric memory. SOLUTION: Pb x (Zr (1-y) Ti y ) O 3 [where x Is applied to a substrate, and the sol-gel liquid is dried and then heat-treated at a temperature of 250 to 350 ° C. (First heat treatment step). The step of applying the sol-gel liquid and the first heat treatment step are repeated a plurality of times. Thereafter, the thin film is heat-treated at a temperature of 500 to 600 ° C. (second heat treatment step). |