| abstract |
(57) [Problem] To provide a tungsten nitride thin film having low specific resistance and small variation. A refractory metal nitride thin film is formed on a surface of a substrate. Before forming the (tungsten nitride thin film) 24, the substrate surface is cleaned with plasma containing ionized nitrogen and hydrogen. Even in the low-temperature CVD process, the growth of the nitride thin film 24 can be started immediately after the cleaning, and the high quality barrier film 33 can be formed. When the type of reducing gas to be introduced is changed, a high melting point metal thin film (tungsten thin film) 25 can be formed on the surface of the nitride thin film 24, so that the barrier film 33 having a laminated structure can be obtained. |