http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000232160-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1999-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32ec7eeb6f2e1f1064219f012adcc423 |
| publicationDate | 2000-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000232160-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | (57) Abstract: In a highly integrated semiconductor device using element isolation having a shallow trench isolation structure, junction leakage due to misalignment in a connection hole opening step is reduced. SOLUTION: A side wall 16 made of an insulating material is formed on a side surface of a connection hole 11. Thereby, the slit 4 generated below the connection hole 11 due to the misalignment is formed. Sidewalls 16 are also formed on the side surfaces of. Therefore, even when the thickness of the adhesion layer 12 formed on the side surface of the slit 4 is small, the generation of the eroded portion of the semiconductor substrate 1 by the metal halide gas in the subsequent step of forming the buried metal layer 13 is prevented. Is done. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030073996-A |
| priorityDate | 1999-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.