| abstract |
(57) Abstract: Provided is a technique for facilitating embedding of a wiring metal into a recess in a semiconductor substrate having a recess such as a wiring groove, a via hole, and a contact hole. SOLUTION: A metal fine particle dispersion in which a metal atom aggregate is dispersed in an organic solvent is prepared, this dispersion is applied on a semiconductor substrate, and the substrate on which the coating film is formed is baked to evaporate the organic substance. After burning, and if desired, after firing, the oxide generated by firing is reduced to form a metal thin film, and then the metal used for wiring is buried in the recesses of the wiring grooves, via holes, and contact holes. By heating a mixture of an organic solvent, a surfactant, and an organometallic compound, a metal atom is precipitated to prepare a metal atom aggregate, and a dispersion of the metal atom aggregate stabilized by the surfactant is obtained. . |