http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000223771-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00 |
| filingDate | 1999-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35245fa5c106f5d6261eab31970fae59 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b707a07517e2fc13e59d220e8ab6e1de |
| publicationDate | 2000-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2000223771-A |
| titleOfInvention | Method of manufacturing InP-based distributed feedback semiconductor laser |
| abstract | [PROBLEMS] To preserve the shape of a diffraction grating on the surface of an n-InP substrate. SOLUTION: H 2 (inert gas may be used) in a growth chamber R. Alternatively, a mixed gas of H 2 and an inert gas may be used. ) Is supplied and the growth chamber R is heated to 350 ° C., which is a temperature within the temperature range for forming the thermal deformation preventing layer 20. Then, the room temperature of the growth chamber R is stabilized at 350 ° C. as it is. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006147797-A |
| priorityDate | 1999-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.