| abstract |
PROBLEM TO BE SOLVED: To provide a high-performance radiation-sensitive silicon-containing negative resist and a method of using this silicon-containing resist for multilayer imaging for semiconductor device fabrication. SOLUTION: There is provided a negative resist composition having a high silicon content, comprising a silicon-containing polymer resin, a crosslinking agent, an acid generator, and a solvent. In this resist composition, an aqueous base-soluble silicone polymer undergoes an O-alkylation reaction with a carbocation as a crosslinking agent at the hydroxyl group of the phenol group. High resolution and high aspect ratio patterning are achieved by high contrast crosslinking in the presence of an acid catalyst. This resist composition is Upper imaging layer in a multilayer system including two layers for manufacturing semiconductor devices using various irradiation sources such as middle ultraviolet (UV), deep ultraviolet, extreme ultraviolet, X-ray, electron beam, and ion beam irradiation. Can be used as |