http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000216485-A

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filingDate 1999-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_406294bbf566f031b4fe3ae5171e7d4a
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publicationDate 2000-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000216485-A
titleOfInvention Semiconductor device
abstract (57) Abstract: A semiconductor device suitable for driving a laser diode by a harmonic superposition method is formed. An output signal from an oscillator is amplified by an output amplifier and then applied to a laser diode. A transistor element and a passive element for forming an oscillator and an output amplifier are integrated on the same silicon semiconductor substrate. The semiconductor chip 50 is fixed on the island 51 and connected to each lead by a bonding wire 64. The island 51 is provided with a continuous extension portion 58 extending between the lead terminals 60 and 61. The ground potential GND is applied to the extension portion 58.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4678127-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005184502-A
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Total number of triples: 24.