| abstract |
(57) [Problem] To provide a semiconductor device capable of increasing the strength of a package in a stacked state and preventing the occurrence of a package crack against a load in a bending direction. SOLUTION: The wiring layer of the interposer on which a wiring layer is formed is electrically and mechanically connected to an electrode portion of a thin silicon chip by using an anisotropic conductive film, and the wiring layer of the interposer is thinned. A semiconductor device having a structure in which a plurality of semiconductor packages led out of a silicon chip are stacked on a mounting substrate, wherein each of the semiconductor packages is stacked with the thin silicon chip surface upside down and a predetermined electrode Are electrically connected by conductors. |