| abstract |
(57) [Problem] To provide a semiconductor device manufacturing process with 193 nm ArF and In the ultrafine pattern formation process using 248 nm KrF light, A novel compound that can be used for antireflection is provided. In a semiconductor device manufacturing process, in an ultrafine pattern forming process using a photoresist for 248 nm KrF and 193 nm ArF lithography, reflection of a lower film layer is prevented, and a change in thickness of ArF light and the thickness of the photoresist itself is prevented. An organic anti-reflection resin compound capable of removing waves and a method for producing the same, wherein when this resin compound is used as an anti-reflection film, by removing fluctuations in CD caused by a lower film, 64M, 256M, 1G, 4G and 16GDRAM can form stable ultra-fine patterns, and can increase product yield. |